Time-resolved measurement in a memory device

Energy Daily

Published

Zurich, Switzerland (SPX) Feb 24, 2020

At the Department for Materials of the ETH in Zurich, Pietro Gambardella and his collaborators investigate tomorrow's memory devices. They should be fast, retain data reliably for a long time and also be cheap. So-called magnetic "random access memories" (MRAM) achieve this quadrature of the circle by combining fast switching via electric currents with durable data storage in magnetic materials.

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