Zurich, Switzerland (SPX) Feb 24, 2020
At the Department for Materials of the ETH in Zurich, Pietro Gambardella and his collaborators investigate tomorrow's memory devices. They should be fast, retain data reliably for a long time and also be cheap. So-called magnetic "random access memories" (MRAM) achieve this quadrature of the circle by combining fast switching via electric currents with durable data storage in magnetic materials.
Time-resolved measurement in a memory device
Energy Daily
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